Demonstration of forward inter-band tunneling in GaN by polarization engineering
نویسندگان
چکیده
منابع مشابه
Demonstration of forward inter-band tunneling in GaN by polarization engineering
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm at 10 mV, and 17.7 A/cm peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable ne...
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We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel–Kramers– Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN / In0.33Ga0.67N /n-GaN heterostructure tunnel diodes were grown using molecular ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3666862